IPD12CNE8N G 全国供应商、价格、PDF资料
IPD12CNE8N G详细规格
- 类别:FET - 单
- 描述:MOSFET N-CH 85V 67A TO252-3
- 系列:OptiMOS™
- 制造商:Infineon Technologies
- FET型:MOSFET N 通道,金属氧化物
- FET特点:标准
- 漏极至源极电压333Vdss444:85V
- 电流_连续漏极333Id4440a025000C:67A
- 开态Rds(最大)0a0IdwwwwVgs0a025000C:12.4 毫欧 @ 67A,10V
- Id时的Vgs333th444(最大):4V @ 83µA
- 闸电荷333Qg4440a0Vgs:64nC @ 10V
- 输入电容333Ciss4440a0Vds:4340pF @ 40V
- 功率_最大:125W
- 安装类型:表面贴装
- 封装/外壳:TO-252-3,DPak(2 引线+接片),SC-63
- 供应商设备封装:PG-TO252-3
- 包装:带卷 (TR)
- 存储器 IDT, Integrated Device Technology Inc 64-LQFP IC SRAM 64KBIT 20NS 64TQFP
- Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps Texas Instruments 8-SOIC(0.154",3.90mm 宽) IC OPAMP GP 700KHZ DUAL 8SOIC
- FET - 单 Infineon Technologies TO-252-3,DPak(2 引线+接片),SC-63 MOSFET N-CH 100V 67A TO252-3
- 时钟/计时 - 时钟发生器,PLL,频率合成器 IDT, Integrated Device Technology Inc 20-SSOP(0.154",3.90mm 宽) IC VERSACLOCK SYNTHESIZER 20QSOP
- PMIC - LED 驱动器 Texas Instruments 6-WDFN 裸露焊盘 IC LED DRVR WT/OLED BCKLGT 6-LLP
- 逻辑 - FIFO IDT, Integrated Device Technology Inc 64-LQFP IC FIFO SS 16384X18 15NS 64QFP
- Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps Texas Instruments 16-SOIC(0.295",7.50mm 宽) IC OP AMP QUAD & ADJ REF 16-SOIC
- 存储器 IDT, Integrated Device Technology Inc 64-LQFP IC SRAM 128KBIT 15NS 64TQFP
- Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps Texas Instruments 8-SOIC(0.154",3.90mm 宽) IC OPAMP GP 700KHZ DUAL 8SOIC
- 时钟/计时 - 时钟发生器,PLL,频率合成器 IDT, Integrated Device Technology Inc 20-SSOP(0.154",3.90mm 宽) IC VERSACLOCK SYNTHESIZER 20QSOP
- PMIC - 电压基准 Texas Instruments IC VREF SHUNT PREC 3.3V SOT-23-5
- Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps Texas Instruments * IC OP AMP DUAL 75MHZ 8-SOIC
- 逻辑 - FIFO IDT, Integrated Device Technology Inc 64-LQFP IC FIFO SS 16384X18 20NS 64QFP
- 存储器 IDT, Integrated Device Technology Inc 64-LQFP IC SRAM 128KBIT 20NS 64TQFP
- Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps Texas Instruments 8-SOIC(0.154",3.90mm 宽) IC OPAMP GP 700KHZ DUAL 8SOIC